学术报告预告：青年千人计划孙钱博士--GaN on Silicon for Optoelectronics and Power Electronics
报告题目：GaN on Silicon for Optoelectronics and PowerElectronics
报告时间：2015年10月13日14:30
报告地点：西教二407
内容简介：The dream of epitaxially integrating III-Nitride semiconductors on large diameter silicon is being fulfilled through the R&D efforts of academia and industry, which is driven by the great potential of GaN-on-Silicon technology in both improving the device performance and adding the system functionality, yet at a significantly reduced cost for optoelectronics and power electronics. This epitaxial integration was hindered by two key technological challenges. The large lattice mismatch between GaN and Si (~17%) often causes a high density of dislocation defects, and the huge misfit in the coefficient of thermal expansion (~54%) results in crack network formation in the GaN epitaxial film. In this talk, we will first walk through various technical approaches in eliminating the crack network, and then present in detail a stress compensation method with an AlN/AlGaN hand-shaking buffer, which has been experimentally verified with a great reproducibility in achieving crack-free GaN-on-Si film with a crystalline quality comparable to that of GaN grown on sapphire substrates. On top of the high-quality GaN-on-Si material platform, we have built highly efficient blue/white/UV LEDs, laser diode, and AlGaN/GaN-based HEMTs (high electron mobility transistors). The different requirements of the various devices for the GaN-on-Si material property and device structure will also be discussed.
个人简介：
孙钱，中科院苏州纳米所研究员、博导，国家自然科学基金委优秀青年基金获得者，科技部高新司“第三代半导体材料”项目总体专家组成员。2002年提前一年从中国科技大学材料物理专业本科毕业，荣获中科大郭沫若校长奖，经免试推荐到中科院半导体所读研。2005年到美国耶鲁大学电子工程系深造，2009年博士毕业，并荣获耶鲁大学工学院唯一的优秀博士毕业生奖。2011年入选中组部首批国家“青年千人计划”，2012年入选江苏省“双创人才”计划”，2015年被评为中国电子学会优秀科技工作者。十余年来一直从事宽禁带半导体GaN材料生长及器件制备的研究，迄今为止共发表了60余篇被SCI收录的学术论文，总引用近700次。参与编写了英文专著一章。持有10余项美国和中国发明专利，其中一项已许可给韩国首尔半导体Seoul Semiconductor公司。曾受国际氮化物会议IWN、ICMOVPE、 Semicon Taiwan LED 2014等国际会议邀请作特邀报告。此外，还应邀为Nano Letters、Nanotechnology、 Applied Physics Letters等国际学术期刊评审论文。目前为国家科技部863计划课题、工信部电子信息产业发展基金项目、及江苏省科技支撑计划项目的负责人，致力研究新型高效LED、激光器、GaN基功率电子器件、硅衬底氮化物半导体的MOCVD外延生长及器件制备等。曾任美国硅谷的普瑞光电公司的外延研发科学家，在8英寸硅衬底上实现了160流明/瓦的高光效GaN基LED。普瑞光电公司已将该技术转售给日本东芝公司，获技术转让费逾1亿美元。回国后与晶能光电有限公司进行产学研实质性合作，成功研发出新一代硅衬底GaN基高效LED的外延及芯片工艺技术，并在全球率先成功产业化，2014年晶能光电基于该技术而新增的LED产品销售逾3亿人民币。